bd135/bd137/BD139 transistor (npn) features high current(1.5a) low voltage(80v) maximum maximum maximum maximum ratings ratings ratings ratings (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted ) ) ) ) symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units bd135 bd135 bd135 bd135 bd137 bd137 bd137 bd137 BD139 BD139 BD139 BD139 v v v v cbo cbo cbo cbo collector-base voltage 45 60 80 v v v v v ceo ceo ceo ceo collector-emitter voltage 45 60 80 v v v v v ebo ebo ebo ebo emitter-base voltage 5 v i i i i c c c c collector current -continuous 1.5 a p p p p c c c c collector power dissipation 1.25 w t t t t j j j j junction temperature 150 t t t t stg stg stg stg storage temperature -55-150 electrical electrical electrical electrical characteristics(tamb=25 characteristics(tamb=25 characteristics(tamb=25 characteristics(tamb=25 unless unless unless unless otherwise otherwise otherwise otherwise specified) specified) specified) specified) parameter parameter parameter parameter symbol symbol symbol symbol test test test test conditions conditions conditions conditions min min min min typ typ typ typ max max max max unit unit unit unit bd135 45 v collector-base collector-base collector-base collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)cbo ic= 100 a,i e =0 bd137 60 BD139 80 bd135 45 v collector-emitter collector-emitter collector-emitter collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ceo* ic= 30 ma,i b =0 bd137 60 BD139 80 emitter-base emitter-base emitter-base emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ebo i e = 100 a,i c =0 5 v collector collector collector collector cut-off cut-off cut-off cut-off current current current current i cbo v cb = 30 v,i e =0 0.1 a emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ebo v eb = 5 v,i c =0 10 a h fe(1) v ce = 2 v,i c = 5 ma 25 dc dc dc dc current current current current gain gain gain gain h fe(2) v ce = 2 v,i c = 150 ma 40 250 h fe(3) v ce = 2 v,i c = 500 ma 25 collector-emitter collector-emitter collector-emitter collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage v ce(sat) i c = 500 ma,i b = 50 ma 0.5 v base-emitter base-emitter base-emitter base-emitter voltage voltage voltage voltage v be v ce = 2 v,i c = 500 ma 1 v *pulse *pulse *pulse *pulse test test test test classification classification classification classification of of of of hfe(2) hfe(2) hfe(2) hfe(2) rank rank rank rank range range range range 40-100 100-200 200-300 to-126 to-126 to-126 to-126 1. emitter 2. collector 3. base 1 2 3 to-126 to-126 to-126 to-126 plastic-encapsulate plastic-encapsulate plastic-encapsulate plastic-encapsulate transistors transistors transistors transistors dongguan nanjing electronics ltd.,
typical typical typical typical characteristics characteristics characteristics characteristics bd135/bd137/BD139 bd135/bd137/BD139 bd135/bd137/BD139 bd135/bd137/BD139
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